Paralleling SIC and IGBT based semiconductor switches (wafer-die) into a custom package to achieve low conduction and switching losses
Keywords:
SiC, IGBT, power electronics, conduction losses, switching losses, hybrid semiconductor packageAbstract
Abstract: The integration of Silicon Carbide (SiC) and Insulated Gate Bipolar Transistor (IGBT) semiconductor switches into a custom package has the potential to achieve significant reductions in conduction and switching losses in power electronic systems. This paper presents an innovative approach that involves paralleling SiC and IGBT-based wafer-die switches into a single, optimized package, specifically designed to exploit the strengths of both semiconductor materials. SiC, with its superior thermal conductivity, high breakdown voltage, and low switching losses, complements the high current handling and robustness of IGBT, creating a hybrid configuration that maximizes efficiency and power density. The proposed custom package enables better current distribution between the switches, reducing the impact of parasitic elements such as resistance and inductance, which typically cause power loss. Detailed simulations and experimental results are provided, showcasing the performance improvements in terms of reduced conduction losses, faster switching times, and enhanced thermal management. The combination of SiC and IGBT allows for a broader operating range, improved system efficiency, and higher thermal tolerance, making it ideal for applications such as industrial motor drives, renewable energy systems, and electric vehicles. Additionally, the new packaging solution improves system reliability by reducing thermal cycling and minimizing failure rates typically associated with individual semiconductor devices. The paper also discusses the design considerations for optimal power density, thermal dissipation, and current-sharing capabilities, with an emphasis on how the new packaging solution enhances overall system performance. Through comprehensive analysis, this work demonstrates the feasibility of SiC and IGBT integration for high-performance power electronic applications, paving the way for more efficient and compact power conversion solutions.
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